Memristor effect in PZT:TiO$_x$ composite film

The electrical properties of a new type of capacitor structures with a Pt/PZT:TiO$_x$/Pt composite film, in which the three-dimensional nanoscale pore structure in the ferroelectric lead zirconate titanate film is filled with titanium dioxide, are studied. The memristor effect is detected using electrical measurements on direct and alternating current, as well as by measuring the local current using contact atomic force microscopy, which opens up prospects for studying such structures for use in advanced resistive memory devices.