A new way to increase the $R_{off}/R_{on}$ memristor parameter on the example of titanium oxide thin-film structure

A method of increasing the parameter of the $R_{off}/R_{on}$ memristor by introducing into its construction an additional electrode of smaller area connected to the lower electrode is proposed. On the example of a memristor based on TiO$_x$ with aluminum electrodes it is shown that this method allows to increase $R_{off}/R_{on}$ not less than three times.