Injection-enhanced annealing of GaAs- and GaN-based heterostuctures irradiated with gamma-quanta and neutrons

Injection current has been shown to fully recover gamma-irradiated GaAs- and GaN-heterostructures in contrast to neutron-irradiated samples. The threshold dependency of injection-enhanced annealing on current density has been revealed. The threshold current density of annealing in neutron-irradiated samples is of the order of magnitude higher than in gamma irradiation case. The results indicate different height of potential barriers created by radiation-induced defects clusters in GaN and GaAs.