RUS
ENG
Full version
JOURNALS
// Pisma v Zhurnal Tekhnicheskoi Fiziki
// Archive
Pisma v Zhurnal Tekhnicheskoi Fiziki,
1986
Volume 12,
Issue 6,
Pages
335–341
(Mi pjtf80)
Formation of transition layers in heterostructures based on
$Ga\,As-Al\,As$
solid-solutions during the liquid-phase epitaxy
Zh. I. Alferov
,
B. Ya. Ber
,
D. Z. Garbuzov
,
K. Yu. Kizhaev
,
V. V. Krasovskii
,
S. A. Nikishin
,
D. V. Sinyavskii
,
V. P. Ulin
Ioffe Physico-Technical Institute USSR Academy of Sciences, Leningrad
Received:
10.01.1985
Fulltext:
PDF file (650 kB)
Bibliographic databases:
©
Steklov Math. Inst. of RAS
, 2024