A. V. Emelyanov, A. G. Kazanskii, P. K. Kashkarov, O. I. Kon'kov, N. P. Kutuzov, V. L. Lyaskovskii, P. A. Forsh, M. V. Khenkin, “Modification of the structure and hydrogen content of amorphous hydrogenated silicon films under conditions of femtosecond laser-induced crystallization”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2014, Volume 40, Issue 4,Pages <nobr>1

This article is cited in 2 papers

Modification of the structure and hydrogen content of amorphous hydrogenated silicon films under conditions of femtosecond laser-induced crystallization

A. V. Emelyanov^abcd, A. G. Kazanskii^abcd, P. K. Kashkarov^abcd, O. I. Kon'kov^abcd, N. P. Kutuzov^abcd, V. L. Lyaskovskii^abcd, P. A. Forsh^abcd, M. V. Khenkin^abcd

^a Lomonosov Moscow State University
^b National Research Centre "Kurchatov Institute", Moscow
^c Ioffe Institute, St. Petersburg
^d The All Russian Scientific-Research Institute for Optic Physical Metrology of Government Standard, Moscow

Abstract: We have studied the Raman spectra of initially amorphous hydrogenated silicon (a-Si:H) films upon their exposure to femtosecond laser-radiation pulses with the fluence varied within 30–155 mJ/cm$^2$. The distribution of the volume fraction of a crystalline phase over the surface of processed films is determined for the first time and a correlation is established between changes in this value and the hydrogen content in a-Si:H films upon the crystallization induced by femtosecond laser radiation.

Received: 03.10.2013