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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2014 Volume 40, Issue 7, Pages 87–94 (Mi pjtf8125)

This article is cited in 7 papers

The effect of the memristor electrode material on its resistance to degradation under conditions of cyclic switching

J. V. Khrapovitskaya, N. E. Maslova, Yu. V. Grishchenko, V. A. Demin, M. L. Zanaveskin

National Research Centre "Kurchatov Institute", Moscow

Abstract: The stability of titanium oxide memristors with gold and platinum electrodes with respect to switching-induced degradation has been studied. It is established that the use of gold instead of platinum as the electrode material significantly increases the resistance of a memristor to degradation in the course of repeated resistance read-write(erase) cycles. The first Russian high-endurance memristor based on titanium oxide has been obtained, which can withstand up to 3000 resistive switching cycles.

Received: 11.11.2013


 English version:
Technical Physics Letters, 2014, 40:4, 317–319

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