Properties of InGaN/GaN heterostructures obtained using growth interruption under various conditions

Conversion of the near-surface regions of InGaN into GaN during growth interruption has been studied. It has been established that the process exhibits saturation in time, develops at a depth below 2 nm, and proceeds in a similar way in the presence and absence of hydrogen, although hydrogen supply significantly accelerates the conversion process. InGaN/GaN heterostructures obtained with interruption of growth exhibit an additional photoluminescence line with a longer wavelength as compared to that for an otherwise analogous continuous InGaN layer. It is established that growth interruption in a hydrogen-free atmosphere is more favorable for obtaining light-emitting structures for the green spectral range.