V. N. Bessolov, E. V. Konenkova, S. A. Kukushkin, A. V. Myasoedov, A. V. Osipov, S. N. Rodin, M. P. Scheglov, N. A. Feoktistov, “Epitaxy of semipolar GaN on a Si(001) substrate with a SiC buffer layer”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2014, Volume 40, Issue 9,Pages <nobr>48

This article is cited in 9 papers

Epitaxy of semipolar GaN on a Si(001) substrate with a SiC buffer layer

V. N. Bessolov^ab, E. V. Konenkova^ab, S. A. Kukushkin^ab, A. V. Myasoedov^ab, A. V. Osipov^ab, S. N. Rodin^ab, M. P. Scheglov^ab, N. A. Feoktistov^ab

^a Ioffe Institute, St. Petersburg
^b Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg

Abstract: A new method of synthesis of semipolar gallium nitride on a silicon substrate using the technology of solid-phase epitaxy of 3C-SiC nanocrystals has been suggested. It has been demonstrated that application of buffer layers of 3C-SiC and AlN enables one to form epitaxial layers of semipolar gallium nitride with layer deviation from the polar position of the c axis of a wurtzite crystal by an angle of 48$^\circ$–51$^\circ$ at the minimal half-width of the X-ray diffraction rocking curve $(\omega_\theta)\sim$ 24'. The observed bend of a cylindrical character in the structure of GaN/AlN/3C-SiC(001) is explained by the anisotropic deformation of semipolar GaN on silicon.

Received: 11.12.2013