Pisma v Zhurnal Tekhnicheskoi Fiziki, 2014 Volume 40, Issue 13, Pages 36–43
(Mi pjtf8194)
This article is cited in
3 papers
A hybrid system of GaAs whisker nanocrystals and PbS quantum dots on silicon substrate
A. I. Khrebtov abcdefgh ,
V. G. Talalaev dcabefhg ,
Yu. B. Samsonenko dbcaefhg ,
P. Werner g ,
V. V. Rutskaya cdbefhga ,
M. V. Artem'ev i ,
G. È. Cirlin bcadefhg a Ioffe Institute, St. Petersburg
b St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
c Martin-Luther-Universität Halle-Wittenberg
d Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
e Research Institute of Optical Materials Technology, All-Russian Scientific Centre "S. I. Vavilov State Optical Institute", St. Petersburg
f V. A. Fock Institute of Physics, Saint-Petersburg State University
g Max Planck Institute of Microstructure Physics, Halle (Saale), Germany,
06120 Halle, Germany
h Peter the Great St. Petersburg Polytechnic University
i Research Institute for Physical Chemical Problems of the Belarusian State University, Minsk
Abstract:
It is shown that a hybrid nanocomposite structure can be created by integration of semiconducting materials with different dimensionalities: an array of quasi-1D GaAs whisker nanocrystals formed by molecular-beam epitaxy on a Si (111) substrate and 0D PbS colloidal quantum dots. The morphological and spectral properties of the resulting system are analyzed.
Received: 20.02.2014
© , 2025