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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2014 Volume 40, Issue 13, Pages 36–43 (Mi pjtf8194)

This article is cited in 3 papers

A hybrid system of GaAs whisker nanocrystals and PbS quantum dots on silicon substrate

A. I. Khrebtovabcdefgh, V. G. Talalaevdcabefhg, Yu. B. Samsonenkodbcaefhg, P. Wernerg, V. V. Rutskayacdbefhga, M. V. Artem'evi, G. È. Cirlinbcadefhg

a Ioffe Institute, St. Petersburg
b St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
c Martin-Luther-Universität Halle-Wittenberg
d Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
e Research Institute of Optical Materials Technology, All-Russian Scientific Centre "S. I. Vavilov State Optical Institute", St. Petersburg
f V. A. Fock Institute of Physics, Saint-Petersburg State University
g Max Planck Institute of Microstructure Physics, Halle (Saale), Germany, 06120 Halle, Germany
h Peter the Great St. Petersburg Polytechnic University
i Research Institute for Physical Chemical Problems of the Belarusian State University, Minsk

Abstract: It is shown that a hybrid nanocomposite structure can be created by integration of semiconducting materials with different dimensionalities: an array of quasi-1D GaAs whisker nanocrystals formed by molecular-beam epitaxy on a Si (111) substrate and 0D PbS colloidal quantum dots. The morphological and spectral properties of the resulting system are analyzed.

Received: 20.02.2014


 English version:
Technical Physics Letters, 2014, 40:7, 558–561

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