The electric activity of special grain boundaries in multicrystalline silicon grown from metallurgical refined silicon

The properties of special grain boundaries in multicrystalline silicon (mc-Si) grown from metallurgical refined silicon by the Bridgman–Stockbarger method have been studied. The electric activity of grain boundaries was characterized by measuring the electron-beam-induced current. Structural features of the mc-Si samples were studied by scanning electron microscopy, electron-probe microanalysis, and atomic force microscopy techniques.