The structure and photoconductivity of SiGe/Si epitaxial layers modified by single-pulse laser radiation

The effect of nanosecond pulses of ruby laser radiation on the structural state and morphology of the epitaxial layers of a SiO$_{0.5}$Ge$_{0.5}$ solid solution on silicon with the initiation of a crystal-melt phase transition has been studied by electron microscopy. Data on the photoelectric parameters of the laser-modified layers having a cellular structure owing to the segregation of germanium during the solidification of the binary melt have been derived.