A. E. Zhukov, È. I. Moiseev, I. S. Makhov, I. S. Fedosov, F. I. Zubov, A. M. Mozharov, K. A. Ivanov, A. M. Nadtochiy, N. V. Kryzhanovskaya, “High-frequency modulation of a quantum dot microring laser at elevated temperature”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2025, Volume 51, Issue 20,Pages <nobr>32

High-frequency modulation of a quantum dot microring laser at elevated temperature

A. E. Zhukov^a, È. I. Moiseev^a, I. S. Makhov^a, I. S. Fedosov^a, F. I. Zubov^b, A. M. Mozharov^b, K. A. Ivanov^a, A. M. Nadtochiy^a, N. V. Kryzhanovskaya^a

^a National Research University "Higher School of Economics", St. Petersburg Branch
^b Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg

Abstract: The dynamic characteristics of a microring laser with InGaAs/GaAs quantum dots were studied using small-signal high-frequency direct modulation at 55$^\circ$C. The largest modulation bandwidth was measured to be 3.7 GHz, the energy-to-data ratio was estimated at 4.2–6.4 pJ/bit. The temperature dependences of the parameters affecting the speed ($K$-factor, threshold current, modulation current efficiency factor) were also determined.

Keywords: high-frequency modulation, microlaser, quantum dots.

Received: 10.06.2025
Revised: 14.07.2025
Accepted: 15.07.2025

DOI: 10.61011/PJTF.2025.20.61399.20402