Wavy microstructures formed at the SiO$_2$/Si interface under the action of high-power ion-beam pulses

The formation of wavy microstructures under the action of a nanosecond pulsed high-power ion beam on the surface of single-crystalline silicon covered with intrinsic oxide layers of various thickness has been studied. Morphological features of the observed structures depend on the oxide layer thickness and ion beam current density. Possible mechanisms of formation of these microstructures are considered.