P. A. Alekseev, M. S. Dunaevskii, E. V. Gushchina, E. Durgun Ozben, E. Lahderanta, A. N. Titkov, “Behavior of locally injected charges in high-k nanolayers of LaScO<nobr>$_3$</nobr> insulator on a Si substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2013, Volume 39, Issue 9,Pages <nobr>47

Behavior of locally injected charges in high-k nanolayers of LaScO$_3$ insulator on a Si substrate

P. A. Alekseev^ab, M. S. Dunaevskii^ab, E. V. Gushchina^ab, E. Durgun Ozben^c, E. Lahderanta^d, A. N. Titkov^ab

^a Ioffe Institute, St. Petersburg
^b Saint Petersburg Electrotechnical University "LETI"
^c Peter Grunberg Insitute 9 (PGI-9-IT) and JARA-FIT, Research Center Julich, D-52425 Julich,German
^d Lappeenranta University of Technology, Lappeenranta FI-53851, Finland

Abstract: A charge leakage in LaScO$_3$ nanolayers on a Si substrate has been investigated by Kelvin probe microscopy. A charge leakage from the LaScO$_3$ layer to the LaScO$_3$/Si interface layer with a subsequent lateral charge spreading in the interface layer and simultaneous leakage to the Si substrate has been revealed in this system. A lateral charge spreading has not been directly observed in the LaScO$_3$ layer.

Received: 09.01.2013