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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2013 Volume 39, Issue 12, Pages 25–34 (Mi pjtf8523)

This article is cited in 4 papers

Dielectric barrier formation and tunneling magnetoresistance effect in strontium iron molybdate

S. E. Demyanovab, N. A. Kalandaab, L. V. Kovalevab, M. V. Avdeevab, M. L. Zheludkevichab, V. M. Haramuscd, R. Willumeitcd

a Scientific-Practical Materials Research Centre of NAS of Belarus
b Joint Institute for Nuclear Research, Dubna, Moscow region
c University of Aveiro, Campus Universitario de Santiago, 3810–193, Aveiro, Portugal
d Helmholtz–Zentrum Geesthacht: Zentrum fur Material-und Kustenforschung GmbH, Max-Planck-Strasse 1, 21502, Geesthacht, Germany

Abstract: A comparative X-ray diffraction study of the initial single-phase metal-oxide compound-strontium iron molybdate Sr$_2$FeMoO$_{6-\delta}$ (SFMO)-and that subjected to additional isothermal annealing shows that this heat treatment leads to the appearance of a SrMoO$_4$ (SMO) phase. Small-angle neutron scattering measurements indicate that the SMO phase forms a dielectric shell surrounding SFMO grains, which has a characteristic thickness of 2–4 nm and extends above 120 nm. The character of the temperature dependence of the electric resistance corresponds to the metal-type conduction in single-phase SFMO and changes to a semiconductor type in the material with SMO dielectric shells, which is evidence of a tunneling mechanism of charge transfer. This conclusion is confirmed by an increase in the absolute value of the negative magnetoresistance of SFMO due to the appearance of a tunneling magnetoresistance component of the same sign.

Received: 06.02.2013


 English version:
Technical Physics Letters, 2013, 39:6, 552–555

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