N. A. Ivanov, O. V. Lobanov, E. V. Mitin, V. V. Pashuk, M. G. Tverskoi, “Effect of fast protons and neutrons on charge-coupled devices”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2013, Volume 39, Issue 17,Pages <nobr>35

This article is cited in 5 papers

Effect of fast protons and neutrons on charge-coupled devices

N. A. Ivanov^ab, O. V. Lobanov^ab, E. V. Mitin^ab, V. V. Pashuk^ab, M. G. Tverskoi^ab

^a The Petersburg Nuclear Physics Institute, The National Research Center "Kurchatov Institute"
^b JSC "RRI" Electronstandart", St. Petersburg

Abstract: Sony ICX 259AL CCD matrices were irradiated by proton and neutron beams of a synchrocyclotron of the Petersburg Nuclear Physics Institute. The data on production cross sections, as well as the spatial and time distributions of pixels of the irradiated matrices with high dark current, are presented. The experimental data are compared with the calculation results.

Received: 25.02.2013