A. M. Nadtochiy, N. V. Kryzhanovskaya, M. V. Maksimov, A. E. Zhukov, È. I. Moiseev, M. M. Kulagina, K. A. Vashanova, Yu. M. Zadiranov, I. S. Mukhin, E. M. Arakcheeva, D. Livshits, A. A. Lipovskii, “Laser generation in microdisc resonators with InAs/GaAs quantum dots transferred on a silicon substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2013, Volume 39, Issue 18,Pages <nobr>70

This article is cited in 4 papers

Laser generation in microdisc resonators with InAs/GaAs quantum dots transferred on a silicon substrate

A. M. Nadtochiy^abcd, N. V. Kryzhanovskaya^abcd, M. V. Maksimov^abcd, A. E. Zhukov^abcd, È. I. Moiseev^abcd, M. M. Kulagina^abcd, K. A. Vashanova^abcd, Yu. M. Zadiranov^abcd, I. S. Mukhin^abcd, E. M. Arakcheeva^abcd, D. Livshits^abcd, A. A. Lipovskii^abcd

^a St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
^b Ioffe Institute, St. Petersburg
^c Peter the Great St. Petersburg Polytechnic University
^d Innolume GmbH, 44263 Dortmund, Deutschland

Abstract: Microdisc resonators based on InAs/GaAs quantum dots separated from a GaAs substrate by selective etching and fixed to a silicon substrate by epoxy glue are studied using luminescence spectroscopy. A disc resonator 6 $\mu$m in diameter exhibits quasi-single-mode laser generation at a temperature of 78 K with a threshold power of 320 $\mu$W and $\lambda/\Delta\lambda$ $\sim$ 27000.

Received: 01.04.2013