Formation of hidden conductive channels under bombardment of germanium by high-energy protons

It was found that hidden channels with a high $p$-type conductivity are formed in germanium crystals under proton irradiation when using a scanning nuclear microprobe. We show that the mechanism of modification of material is analogous to that observed on surfaces as a result of mechanical cleavage of specimens. The role of acceptor centers is played by dangling bonds of the crystal lattice that are created when decelerating protons. It is established that the mobility in such channels has a value close to that in a monocrystal. The method of proton doping under discussion can be used to create highly conductive nanofragmented layers and quantum dots.