Abstract:
A method for designing injection lasers with functionally integrated optical-radiation frequency modulators based on spatially shifted quantum wells in conduction and valence bands is proposed. The structure and variants of band diagrams of functionally integrated laser modulators are considered. It is shown that, in the proposed nanoheterostructures, maximum modulation frequencies are determined by the time of controlled relocation of charge-carrier density maxima in quantum domains and correspond to the terahertz range.