Growth of semiconductor nanowires at large diffusion lengths

A universal asymptotic expression for the law of nanowire (NW) growth in cases where the diffusion lengths for adatoms on the substrate surface are much greater than the NW radius and the diffusion lengths for adatoms on the side surface of the growing crystal are much greater than the NW length. The main stages of growth, which are characterized by different relations between the NW length and its radius and the growth time, are determined. Possible asymptotic regimes of NW epitaxy are considered, including the cases of exponential growth and limited growth to a certain critical thickness, which depend on the direction of the diffusion flux of adatoms on the side surface of the growing crystal.