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// Pisma v Zhurnal Tekhnicheskoi Fiziki
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Pisma v Zhurnal Tekhnicheskoi Fiziki,
2012
Volume 38,
Issue 5,
Pages
71–77
(Mi pjtf8790)
This article is cited in
1
paper
Effect of phosphorus ion implantation on the optical properties of thin films of germanium dioxide doped with Er
$^{3+}$
and Yb
$^{3+}$
ions
I. N. Antonov
,
O. N. Gorshkov
,
A. N. Shushonov
,
A. P. Kasatkin
,
A. Yu. Dudin
,
M. E. Shenina
Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
Abstract:
It is shown that the ion implantation of phosphorus into thin amorphous films of germanium dioxide doped with Er
$^{3+}$
and Yb
$^{3+}$
ions can be used for enhancing luminescence from Er
$^{3+}$
ions at
$\sim$
1.53
$\mu$
m.
Received:
18.07.2011
Fulltext:
PDF file (254 kB)
Cited by
English version:
Technical Physics Letters, 2012,
38
:3,
235–237
Bibliographic databases:
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Steklov Math. Inst. of RAS
, 2025