I. Kh. Akopyan, M. V. Zamoryanskaya, Ya. V. Kuznetsova, B. V. Novikov, D. A. Tsagan-Mandzhieva, “Formation of $p$–$n$ junctions during solid-state chemical reactions involving superionic crystals”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2012, Volume 38, Issue 11,Pages 88

Formation of $p$–$n$ junctions during solid-state chemical reactions involving superionic crystals

I. Kh. Akopyan^ab, M. V. Zamoryanskaya^ab, Ya. V. Kuznetsova^ab, B. V. Novikov^ab, D. A. Tsagan-Mandzhieva^ab

^a V. A. Fock Institute of Physics, Saint-Petersburg State University
^b Ioffe Institute, St. Petersburg

Abstract: It is established that semiconducting heterojunctions can be formed in the AgI–Ag$_2$HgI$_4$–HgI$_2$ and CuI–Cu$_2$HgI$_4$–HgI$_2$ systems obtained as a result of diffusion-controlled solid-state chemical reactions. Concentration profiles of diffusant ions in the obtained structures have been determined using the exciton spectroscopy and electron-probe microanalysis techniques. The current-voltage characteristics of heteroboundaries between ternary compounds and binary crystals have been measured in the dark and under illumination.

Received: 27.02.2012