N. I. Klyui, A. I. Liptuga, V. B. Lozinskii, A. N. Lukyanov, A. P. Oksanych, V. A. Terban, “Application of diamond-like carbon films to increase transmission of semi-insulating GaAs crystals in the IR spectral range”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2012, Volume 38, Issue 13,Pages <nobr>27

This article is cited in 4 papers

Application of diamond-like carbon films to increase transmission of semi-insulating GaAs crystals in the IR spectral range

N. I. Klyui^abc, A. I. Liptuga^abc, V. B. Lozinskii^abc, A. N. Lukyanov^abc, A. P. Oksanych^abc, V. A. Terban^abc

^a Institute of Semiconductor Physics NAS, Kiev
^b Kremenchug National University
^c Silicon Ltd, Svetlovodsk, 27507, Ukraine

Abstract: The effect of treatments in plasmas of different gases and subsequent deposition of diamond-like carbon films (DCFs) on the transmission of semi-insulating GaAs crystals in the IR spectral range has been analyzed. It is shown that deposition of 1- to 1.5-$\mu$m DCFs makes it possible to increase the GaAs transmission in the range of 4–15 $\mu$m and that preliminary treatment in H$^+$ or Ar$^+$ plasma increases the optical transmission of the DCF-GaAs structure. A mechanism is proposed to explain the effect of plasma treatment on the optical transmission of semi-insulating GaAs in the IR spectral range.

Received: 07.03.2012