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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2012 Volume 38, Issue 16, Pages 87–94 (Mi pjtf8937)

This article is cited in 4 papers

Thin magnetite films on an oxidized silicon surface: Raman spectroscopy study

V. A. Vikulovab, V. V. Balashevab, T. A. Pisarenkoab, A. A. Dmitrievab, V. V. Korobtsovab

a Institute for Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences, Vladivostok
b School of Natural Sciences, Far Eastern Federal University, Vladivostok

Abstract: Polycrystalline films of magnetite (Fe$_3$O$_4$) formed by the reactive sputtering of iron in oxygen on Si(001) substrates covered by thin (1.4 nm) or thick (1200 nm) SiO$_2$ layers have been studied by Raman spectroscopy. It is established that (i) the $\alpha$-Fe$_2$O$_3$ phase is formed due to the laser-induced heating in magnetite films synthesized on thick SiO$_2$ layers and (ii) the formation of $\alpha$-Fe$_2$O$_3$ phase depends on the thickness of the buffer SiO$_2$ layer.

Received: 14.03.2012


 English version:
Technical Physics Letters, 2012, 38:8, 772–775

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