V. M. Lukashin, A. B. Pashkovskii, K. S. Zhuravlev, A. I. Toropov, V. G. Lapin, A. B. Sokolov, “Decreasing the role of transverse spatial electron transport and increasing the output power of heterostructure field-effect transistors”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2012, Volume 38, Issue 17,Pages <nobr>84

This article is cited in 13 papers

Decreasing the role of transverse spatial electron transport and increasing the output power of heterostructure field-effect transistors

V. M. Lukashin^a, A. B. Pashkovskii^a, K. S. Zhuravlev^b, A. I. Toropov^a, V. G. Lapin^a, A. B. Sokolov^c

^a Research and Production Corporation "Istok" named after Shokin, Fryazino, Moskovskaya obl.
^b Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^c Research Institute of Microelectronics and Information and Measuring Technology "Research Institute MEIIT", Moscow

Abstract: We present the first results of development of high-power field-effect transistors (FETs) based on a GaAs heterostructure with quantum well and additional potential barriers optimized to reduce the role of transverse spatial electron transport, which leads to a 1.5-fold increase in the output power. The proposed FETs with a gate length of 0.4–0.5 $\mu$m and a total gate width of 0.8 mm exhibit a gain above 8 dB at a frequency of 10 GHz, a specific output power above 1.4 W/mm, and an up to 50% power added efficiency.

Received: 17.04.2012