A. A. Shemukhin, Yu. V. Balakshin, V. S. Chernysh, A. S. Patrakeev, S. A. Golubkov, N. N. Egorov, A. I. Sidorov, B. A. Malyukov, V. N. Statsenko, V. D. Chumak, “Fabrication of ultrafine silicon layers on sapphire”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2012, Volume 38, Issue 19,Pages <nobr>83

This article is cited in 14 papers

Fabrication of ultrafine silicon layers on sapphire

A. A. Shemukhin^abcd, Yu. V. Balakshin^abcd, V. S. Chernysh^abcd, A. S. Patrakeev^abcd, S. A. Golubkov^abcd, N. N. Egorov^abcd, A. I. Sidorov^abcd, B. A. Malyukov^abcd, V. N. Statsenko^abcd, V. D. Chumak^abcd

^a Lomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics
^b Lomonosov Moscow State University
^c Research Institute of Materials Science and Technology, Zelenograd
^d EPIEL Company, Zelenograd, Moscow

Abstract: The effect of energy, dosage, and temperature of irradiation of silicon-on-sapphire structures by Si$^+$ ions, as well as parameters of recrystallization annealing, on crystallinity of silicon film is shown. Implantation conditions and recrystallization annealing conditions are determined.

Received: 08.06.2012