Photodiodes based on InAs/InAs$_{0.88}$Sb$_{0.12}$/InAsSbP heterostructures for 2.5–4.9 $\mu$m spectral range

Photodiodes with a photosensitive area diameter of 0.3 mm operating at room temperature in a middle-IR (2.5–4.9 $\mu$m) wavelength range have been created based on InAs/InAs$_{0.94}$Sb$_{0.06}$/InAs$_{0.88}$Sb$_{0.12}$/InAsSbP/InAs heterostructures grown by liquid phase epitaxy. Distinguishing features of the proposed photodiodes are a high monochromatic responsivity, which reaches a maximum of 0.6–0.8 A/W at $\lambda_{\mathrm{max}}$ = 4.0–4.6 $\mu$m, and a low dark current density of (1.3–7.5)$\times$10$^{-2}$ A/cm$^2$ at a reverse bias of 0.2 V. The differential resistance at zero bias reaches up to 700–800 $\Omega$. The detection ability of photodiodes in the spectral interval of maximum sensitivity reaches (5–8) $\times$ 10$^8$cm $\times$ Hz$^{1/2}$ $\cdot$ W$^{-1}$.