Room-temperature photodiodes based on InAs/InAs$_{0.88}$Sb$_{0.12}$/InAsSbP heterostructures for extended (1.5–4.8 $\mu$m) spectral range

Photodiodes with a photosensitive area of 0.45 $\times$ 0.45 mm$^2$ operating at room temperature in a wavelength range bounded by 4.9 $\mu$m have been created on the basis of InAs/InAs$_{0.94}$Sb$_{0.06}$/InAsSbP/InAs$_{0.88}$Sb$_{0.12}$/InAsSbP/InAs heterostructures grown by liquid phase epitaxy. A distinguishing feature of the proposed photodiodes is extended ($\lambda_{\mathrm{max}}$ = 1.5–4.8 $\mu$m) spectral sensitivity range, in which the photodiode is characterized by a monochromatic responsivity of 0.5–0.8 A/W and a dark current density of 1.0–1.5 A/cm$^2$ at a reverse bias of 0.2 V. The differential resistance at zero bias reaches up to 20–100 $\Omega$. The detection ability of photodiodes in the region of maximum sensitivity reaches (1–2) $\times$ 10$^8$ cm Hz$^{1/2}$ W$^{-1}$.