V. M. Mikushkin, V. V. Shnitov, S. Yu. Nikonov, A. T. Dideikin, S. P. Vul', A. Ya. Vul', D. A. Sakseev, D. V. Vyalikh, O. Yu. Vilkov, “Controlling graphite oxide bandgap width by reduction in hydrogen”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2011, Volume 37, Issue 20,Pages <nobr>1

This article is cited in 16 papers

Controlling graphite oxide bandgap width by reduction in hydrogen

V. M. Mikushkin^abc, V. V. Shnitov^abc, S. Yu. Nikonov^abc, A. T. Dideikin^abc, S. P. Vul'^abc, A. Ya. Vul'^abc, D. A. Sakseev^abc, D. V. Vyalikh^abc, O. Yu. Vilkov^abc

^a Ioffe Institute, St. Petersburg
^b Technische Universität Dresden, D-01062 Dresden, Germany
^c V. A. Fock Institute of Physics, Saint-Petersburg State University

Abstract: Transformation of the chemical composition and electron structure of graphite oxide (GO) nanolayers as a result of their annealing in hydrogen has been studied by X-ray photoelectron spectroscopy using synchrotron radiation. It is established that both the chemical composition and bandgap width of GO can be controlled by varying the temperature and duration of heat treatment. By this means, the properties of GO nanolayers can be smoothly changed from dielectric to semiconductor.

Received: 07.05.2011