On the possibility of growth quantum dot arrays in InAs/GaAs system by droplet epitaxy under MOVPE conditions

We have experimentally studied the possibility of obtaining InAs quantum dot arrays on GaAs(100) substrates by droplet-island growth under low-temperature (160–360$^\circ$C) metalorganic vapor phase epitaxy (MOVPE) conditions. It is established that trimethylindium (In source) exhibits decomposition even at the lower boundary of the indicated temperature interval. The height of In drops formed on the substrate surface was 3–12 nm with a density of $\sim$(0.4–1.4) $\times$ 10$^9$ cm$^{-2}$ depending on the H-MOVPE conditions. In order to retain the dimensions of InAs nanocrystals formed at the subsequent stage, the process should be carried out at an increased rate of arsine supply.