K. V. Marem'yanin, D. M. Ermolaev, D. V. Fateev, S. V. Morozov, N. A. Maleev, V. E. Zemlyakov, V. I. Gavrilenko, V. V. Popov, S. Yu. Shapoval, “Wide-aperture detector of terahertz radiation based on GaAs/InGaAs transistor structure with large-area slit grating gate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2010, Volume 36, Issue 8,Pages <nobr>39

This article is cited in 10 papers

Wide-aperture detector of terahertz radiation based on GaAs/InGaAs transistor structure with large-area slit grating gate

K. V. Marem'yanin^a, D. M. Ermolaev^b, D. V. Fateev^c, S. V. Morozov^b, N. A. Maleev^d, V. E. Zemlyakov^b, V. I. Gavrilenko^a, V. V. Popov^c, S. Yu. Shapoval^b

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Institute of Microelectronics Technology and High-Purity Materials RAS
^c Saratov Branch, Kotel'nikov Institute of Radio-Engineering and Electronics, Russian Academy of Sciences
^d Ioffe Institute, St. Petersburg

Abstract: Terahertz photoresponse of a GaAs/InGaAs transistor structure with large-area slit grating gate has been measured. Peaks in the photoresponse curve are assigned to plasmon resonances excited in the structure. More effective excitation of plasmon resonances is achieved in a grating gate structure with narrow slits, which increase the photoresponse amplitude by an order of magnitude.

Received: 15.11.2009