V. V. Utochkin, V. V. Rumyantsev, M. A. Fadeev, A. A. Razova, K. A. Mazhukina, A. A. Yantser, V. I. Gavrilenko, S. A. Kraev, E. A. Arkhipova, A. V. Okomel'kov, N. N. Mikhailov, S. A. Dvoretskii, S. V. Morozov, “Studies of electroluminescence spectra of HgCdTe quantum well structures under lateral current pumping”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2026, Volume 52, Issue 5,Pages <nobr>9

Studies of electroluminescence spectra of HgCdTe quantum well structures under lateral current pumping

V. V. Utochkin^a, V. V. Rumyantsev^a, M. A. Fadeev^a, A. A. Razova^ab, K. A. Mazhukina^a, A. A. Yantser^a, V. I. Gavrilenko^ab, S. A. Kraev^a, E. A. Arkhipova^a, A. V. Okomel'kov^a, N. N. Mikhailov^c, S. A. Dvoretskii^c, S. V. Morozov^a

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b National Research Lobachevsky State University of Nizhny Novgorod
^c Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: We study a HgCdTe heterostructure with multiple quantum wells as a possible source for NDIR spectroscopy. It is shown that during lateral current pumping, as a result of injection of hot carriers from contacts, interband spontaneous emission is observed at temperatures up to room one. We investigate the current-voltage characteristics for the structures and determine the dominant mechanism of generation of nonequilibrium carriers under conditions of lateral current pumping.

Keywords: HGCDTE, NDIR, quantum well, IR.

Received: 29.09.2025
Revised: 21.10.2025
Accepted: 02.11.2025

DOI: 10.61011/PJTF.2026.05.62329.20508