RUS  ENG
Full version
JOURNALS // Pisma v Zhurnal Tekhnicheskoi Fiziki // Archive

Pisma v Zhurnal Tekhnicheskoi Fiziki, 2026 Volume 52, Issue 6, Pages 27–30 (Mi pjtf9752)

Study of the temperature dependence of the light-voltage-current characteristics of silicon heterojunction solar cells

E. I. Terukovabcd, O. K. Ataboeve, D. A. Malevskiia, I. E. Panaiottia, A. V. Kocherginc, I. S. Shahrayd

a Ioffe Institute, St. Petersburg
b St. Petersburg National Research University of Information Technologies, Mechanics and Optics
c R&D Center TFTE, St.-Petersburg
d Saint Petersburg Electrotechnical University "LETI"
e Research Institute of Semiconductor Physics and Microelectronics, Tashkent

Abstract: A study of the temperature dependence of the light volt-ampere characteristics of silicon heterojunction solar cells made on $n$- and $p$-type silicon substrates in a wide temperature range (from -100 to +100$^\circ$C) has been carried out. The observed difference in the behavior of the light volt-ampere characteristics is explained by the peculiarities of the energy band diagrams of the silicon heterojunction solar cells.

Keywords: silicon solar cell, heterojunction solar cells, temperature dependence of the current-voltage characteristics, $S$-shaped current-voltage characteristics.

Received: 21.10.2025
Revised: 25.11.2025
Accepted: 26.11.2025

DOI: 10.61011/PJTF.2026.06.62460.20540



Bibliographic databases:


© Steklov Math. Inst. of RAS, 2026