Formation of InPAs solid solutions by solid phase substitution method

The samples obtained by the method of solid-phase substitution of the fifth group elements in InP with arsenic and in InAs with phosphorus during $\tau$ = 30 and 70 min at temperatures $t$ = 585 and 655$^\circ$C are investigated. According to secondary ion mass spectrometry data, the elements of the fifth group penetrated to a depth of 100 nm. For InP, the amount and depth of penetration of arsenic at the same $\tau$ and $t$ differed with different types of doping of the substrates.