A. N. Akimov, A. V. Belenchuk, A. E. Klimov, M. M. Kachanova, I. G. Neizvestnyi, S. P. Suprun, O. M. Shapoval, V. N. Sherstyakova, V. N. Shumskii, “Thin-film PbSnTe : In/BaF$_2$/CaF$_2$/Si structures for monolithic matrix photodetectors operating in the far infrared range”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2009, Volume 35, Issue 11,Pages 88

This article is cited in 7 papers

Thin-film PbSnTe : In/BaF$_2$/CaF$_2$/Si structures for monolithic matrix photodetectors operating in the far infrared range

A. N. Akimov^ab, A. V. Belenchuk^ab, A. E. Klimov^ab, M. M. Kachanova^ab, I. G. Neizvestnyi^ab, S. P. Suprun^ab, O. M. Shapoval^ab, V. N. Sherstyakova^ab, V. N. Shumskii^ab

^a Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Institute of Electronic Engineering and Industrial Technologies, Academy of Sciences of Moldova, MD-2028, Chisinau, Moldova

Abstract: We report for the first time on the creation of 288 $\times$ 2 matrix photodetectors with an element size of 25 $\times$ 25 $\mu$m based on PbSnTe : In/BaF$_2$/CaF$_2$/Si structures and present their threshold characteristics. The detection ability of about 90% elements ranges from 7.2 $\times$ 10$^{12}$ to 8.7 $\times$ 10$^{12}$ cm $\times$ Hz$^{0.5}$/W at $T$ = 21.2 K. The proposed technology opens ways to the creation of monolithic matrix photodetectors operating in the far-IR range.

Received: 17.10.2008