Alternating magnetoresistance and temperature dependence of electrical conductivity of single crystals of solid solutions of cadmium arsenide

A single crystal of solid solution was grown by the modified Bridgman method (Cd0.5Zn0.5)3As2. The Hall mobility and the concentration of charge carriers were measured. The dependence of electrical conductivity and magnetoresistance was investigated in the range from 10 to 300 K. It was found that in the system (Cd0.5Zn0.5)3As2 demonstrating to the Mott variable-range hopping conductivity mechanism. Negative magnetoresistance is manifested in a wide temperature range in an orthogonal magnetic field of 1 Tl. The radius of localization of charge carriers a = 262 ˚A, the Coulomb gap $\Delta$ = 0.259 meV are determined.