Abstract:
A single crystal of directionally crystallized eutectic InSb-MnSb were synthesized and the electrical properties was determined. Needle inclusions with a high aspect ratio of MnSb ferromagnetic metal are arranged in parallel in the InSb semiconductor matrix. The temperature dependences of the resistivity demonstrate the presence of high anisotropy of electrical properties in samples with different orientations of the direction of electric current and MnSb needle inclusions.The high effective concentration of the main charge carriers (holes) is 7 · 1020 ñì−3. The mobility of the main charge carriers reaches 70 ñì2 / (Â · ñ). The resistivity of MnSb needle inclusions is lower than in bulk crystals, which indicates their higher crystal perfection. Acknowledgements The paper was carried out with the support of the Ministry of Science and Education of the Russian Federation (g/w №0851-2020-0035) and within the framework of the strategic academic leadership program "Priority 2030"(Agreement №075-15-2021-1213) in terms of obtaining and characterizing research objects, RNF (21-12-00254) in terms of studying their electrical properties.
