Calculation of characteristics of the silicon carbide schottky diodes for small metalpolymeric package

The characteristics of the guard system of the 4H-SiC silicon carbide Schottky diodes with used the physical simulation method and optimal configurations (levels of doping and thickness of the 4H-SiC epitaxial layer) of the diode structure for obtaining of high values of the breakdown voltage have been calculated. It is established that the optimum structure of the Schottky diode for installation in modern small metalpolymeric package (SOT, QFN) corresponds to the diode with concentration of donors in 4H-SiC epitaxial layer 3,75$\times10^{15}$ cm$^{-3}$, thickness of epitaxial layer of 18 microns and a system from six $p+$ guard rings and JTE layer.