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JOURNALS // Prikladnaya Mekhanika i Tekhnicheskaya Fizika // Archive

Prikl. Mekh. Tekh. Fiz., 1998 Volume 39, Issue 4, Pages 17–24 (Mi pmtf3285)

Example of an exact solution of the problem of the distribution of an ionized impurity in the surface region of a semiconductor

A. A. Papina, A. P. Mazhirinb

a Altai State University, Barnaul 656099
b Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, Novosibirsk 630090

Abstract: An exact solution of the nonlinear problem of determining the electrostatic potential and the distribution profile of an ionized impurity in the surface region of a semiconductor is constructed.

UDC: 517.93+537.33

Received: 29.07.1996
Accepted: 28.11.1996


 English version:
Journal of Applied Mechanics and Technical Physics, 1998, 39:4, 493–500

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