RUS
ENG
Full version
JOURNALS
// Prikladnaya Mekhanika i Tekhnicheskaya Fizika
// Archive
Prikl. Mekh. Tekh. Fiz.,
1998
Volume 39,
Issue 4,
Pages
17–24
(Mi pmtf3285)
Example of an exact solution of the problem of the distribution of an ionized impurity in the surface region of a semiconductor
A. A. Papin
a
,
A. P. Mazhirin
b
a
Altai State University, Barnaul 656099
b
Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, Novosibirsk 630090
Abstract:
An exact solution of the nonlinear problem of determining the electrostatic potential and the distribution profile of an ionized impurity in the surface region of a semiconductor is constructed.
UDC:
517.93
+537.33
Received:
29.07.1996
Accepted:
28.11.1996
Fulltext:
PDF file (587 kB)
English version:
Journal of Applied Mechanics and Technical Physics, 1998,
39
:4,
493–500
Bibliographic databases:
©
Steklov Math. Inst. of RAS
, 2024