L. M. Dolginov, L. V. Druzhinina, P. G. Eliseev, A. N. Lapshin, M. G. Mil'vidskii, B. N. Sverdlov, “Injection heterolaser based on InGaAsSb four-component solid solution”, Kvantovaya Elektronika, 1978, Volume 5, Number 3,Pages <nobr>703

This article is cited in 19 papers

Brief Communications

Injection heterolaser based on InGaAsSb four-component solid solution

L. M. Dolginov, L. V. Druzhinina, P. G. Eliseev, A. N. Lapshin, M. G. Mil'vidskii, B. N. Sverdlov

Abstract: Stimulated emission was obtained at the wavelength of 1.9 μ from a GaSb/InGaAsSb/GaSb heterostructure using an injection current of 900 A/cm² density at 90° K.

UDC: 621.382.3

PACS: 42.55.Px, 73.40.Lq

Received: 01.12.1977