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Kvantovaya Elektronika, 1980 Volume 7, Number 5, Pages 1110–1112 (Mi qe10223)

Brief Communications

High-efficiency phase hologram recording in chalcogenide films at elevated temperatures

V. E. Karnatovskii, V. G. Remesnik, V. G. Tsukerma

Institute of automation and Electrometry, Siberian branch of the USSR Academy of Sciences, Novosibirsk

Abstract: It was found that the sensitivity of chalcogenide films to weakly absorbed light ($\alpha<10^3$ cm${}^{_1}$) increased at elevated temperatures. This effect was attributed to thermal activation of photostructural transitions and was observed in films of the $As-S$ and $As-S-Se$ systems, but not those of the $As-Se$ system. It should be possible to use this effect in highly efficient recording of phase holograms at temperatures of 100-120 degree C and for nondestructive readout at room temperature with the aid of light of just one wavelength ($\lambda=632.8$ or $\lambda=514.5$ nm).

UDC: 778.38:539.216

PACS: 42.40.Ht

Received: 09.08.1979
Revised: 30.11.1979


 English version:
Soviet Journal of Quantum Electronics, 1980, 10:5, 636–638

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