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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1980 Volume 7, Number 12, Pages 2543–2551 (Mi qe10224)

This article is cited in 1 paper

Optical gain in halogen atom recombination reactions

I. A. Izmailov, V. A. Kochelap

Institute of semiconductors of the Academy of Sciences of the Ukrainian SSR, Kiev

Abstract: The radiative channel of halogen atom recombination reactions is discussed using experimental data. It is found that various types of population of excited electronic states are formed during recombination. Calculations are made of the optical amplification cross sections for various transitions. It is found that for recombining atom concentrations of $1-5\cdot10^{18}$ cm${}^{-3}$ at temperatures not exceeding 600-800 K, an optical gain of the order of $10^{-3}$cm${}^{-1}$ may be achieved in the near infrared.

UDC: 621.378.335

PACS: 42.55.Ks

Received: 04.04.1980


 English version:
Soviet Journal of Quantum Electronics, 1980, 10:12, 1484–1489

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