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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1980 Volume 7, Number 11, Pages 2487–2488 (Mi qe10401)

Brief Communications

Injection $GaInPAs/InP$ heterojunction laser with $6-7^\circ$ output divergence, emitting nonwaveguide modes

A. P. Bogatov, P. G. Eliseev, G. T. Mikayelyan, B. N. Sverdlov

P. N. Lebedev Physical Institute, the USSR Academy of Sciences, Moscow

Abstract: A heterojunction laser emitting at 1.255$\mu m$ was constructed. The active layer was inclined at an angle of $13^\circ$ relative to the resonator axis. This inclination suppressed excitation of waveguide modes and ensured generation of nonwaveguide modes with an output divergence of $6-7^\circ$. The minimum threshold current density at room temperature was 18 kA/cm${}^2$, which was only 3 times higher than in similar waveguide lasers.

UDC: 534.42:621.378.325

PACS: 42.55.Px

Received: 28.05.1980


 English version:
Soviet Journal of Quantum Electronics, 1980, 10:11, 1450–1451

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© Steklov Math. Inst. of RAS, 2024