Optoelectronic internal memory utilizing a metal–nitride–oxide–semiconductor structure and a laser electron-beam tube

It is shown that an optoelectronic internal memory can be based on a metal–nitride–oxide–semiconductor structure and a laser electron-beam tube. The capacity of this memory is $10^9-10^{10}$ bit and the data access speed is $10^3-10^4$ bit per 50 $\mu s$.