RUS  ENG
Full version
JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1980 Volume 7, Number 10, Pages 2218–2221 (Mi qe10575)

Brief Communications

Fast-response photodiode based on a surface-barrier $Au-nn^+-GaAs$ structure

Yu. A. Vasil'ev, Yu. V. Dmitriev, P. G. Eliseev, I. A. Skopin, V. I. Stafeev

P. N. Lebedev Physical Institute, the USSR Academy of Sciences, Moscow

Abstract: A fast-response photodiode was constructed from a surface-barrier $Au-nn^+-GaAs$ structure. The active $n$-type region was a film grown by vapor epitaxy and characterized by a free-electron density $n=10^{14}-10^{15}$ cm${}^{-3}$. The photodiode was highly sensitive in a wide spectral range of 0.25-0.9$\mu m$. The monochromatic current responsivity was 0.5 A/W at $\lambda=0,8\mu m$. The rise time of the photoresponse signal was 100 psec when the bias voltage was up to 50 V.

UDC: 621.383.4

PACS: 73.30.+y, 85.60.Gz

Received: 29.02.1980


 English version:
Soviet Journal of Quantum Electronics, 1980, 10:10, 1288–1289

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2025