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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1980 Volume 7, Number 10, Pages 2237–2240 (Mi qe10582)

This article is cited in 21 papers

Brief Communications

Growth and optical properties of the $AgGa_{1-x}In_xS_2$ system

V. V. Badikov, I. N. Matveev, V. L. Panyutin, S. M. Pshenichnikov, A. E. Rozenson, S. V. Skrebneva, N. K. Trotsenko, N. D. Ustinov


Abstract: A study was made of the growth conditions for the $AgGa_{1-x}In_xS_2$ system and single crystals with the compositions $x=0,08;0,2$ and $0,6$ were grown. The absorption coefficients and the refractive indices were measured in the range $0,55-11,5\mu m$. The wavelength dependences of the refractive indices were approximated by the Sellmeier polynomials. The phase matching diagrams were plotted for the $oo-e$ frequency mixing process. A study was made of the influence of the percentage amounts of gallium and indium in these single crystals on the phase-matching conditions.

UDC: 548:539.21

PACS: 42.70.Fh, 81.10.Fq

Received: 05.04.1980


 English version:
Soviet Journal of Quantum Electronics, 1980, 10:10, 1302–1303

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© Steklov Math. Inst. of RAS, 2024