V. V. Bezotosnyi, L. M. Dolginov, P. G. Eliseev, M. G. Mil'vidskii, B. N. Sverdlov, E. G. Shevchenko, G. V. Shepekina, “Buried mesastripe cw room-temperature $GaInPAs/InP$ heterojunction lasers in the $1,24-1,28\mu m$ wavelength range”, Kvantovaya Elektronika, 1980, Volume 7, Number 9,Pages 1990

This article is cited in 2 papers

Brief Communications

Buried mesastripe cw room-temperature $GaInPAs/InP$ heterojunction lasers in the $1,24-1,28\mu m$ wavelength range

V. V. Bezotosnyi^ab, L. M. Dolginov^ab, P. G. Eliseev^ab, M. G. Mil'vidskii^ab, B. N. Sverdlov^ab, E. G. Shevchenko^ab, G. V. Shepekina^ab

^a P. N. Lebedev Physical Institute, the USSR Academy of Sciences
^b The Federal State Research and Design Institute of Rare Metal Industry, Moscow

Abstract: Continuous-wave heterojunction lasers utilizing an isoperiodic system of quaternary $GaInPAs$ solid solutions, fabricated by liquid-phase epitaxy on $p-InP$ substrates, were built and investigated. The lasers operated at room temperature in the $1,24-1,28\mu m$ spectral range optimal for use in fiber-optical communication systems. The lasers had a buried mesastripe structure with two-dimensional optical confinement. The lowest threshold current at room temperature was 30 mA and the single-mode output power was 5-7 mW. The highest operating temperature was 85 degree C.

UDC: 621.378.3

PACS: 42.55.Px

Received: 02.06.1980