Feasibility of construction of a pulsed avalanche photodetector based on an MIS structure with stable internal amplification

A theoretical and experimental investigation was made of the dynamics of a pulsed avalanche process in a metal–insulator–semiconductor (MIS) structure. It was predicted that the application of a linearly rising voltage should produce a quasi-equilibrium avalanche. Full agreement was observed between the experimental results and the theoretical model. The principal differences in the dynamics of the avalanche process were established between an MIS structure and a p–n junction. The results indicated that it should be possible to use the avalanche effect in new optoelectronic photodetection systems.