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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1987 Volume 14, Number 11, Pages 2135–2136 (Mi qe10830)

This article is cited in 5 papers

Letters to the editor

Photobiological effects of semiconductor laser radiation in the near infrared

V. P. Zharov, T. Ĭ. Karu, Yu. O. Litvinov, O. A. Tiflova


Abstract: An investigation was made of the effects of radiation from a pulsed gallium arsenide (λ = 890 nm, pulse repetition frequency 666 and 3480 Hz, intensity 12 mW/m2) on the rate of growth of E. coli bacteria. It was found that the growth of a culture was accelerated by radiation doses 0.1–1.5 J/m2 and the maximum effect (when ratio of the number of cells in the irradiated and unirradiated cultures amounted to about 1.7) was observed for doses 0.5–0.8 J/m2. The effect was independent of the pulse repetition frequency, provided the other parameters of laser radiation (intensity, dose) were constant.

UDC: 621.373.826:571.08

PACS: 87.54.-n, 87.50.Hj, 42.62.Be, 87.17.Ee, 42.55.Px

Received: 16.06.1987


 English version:
Soviet Journal of Quantum Electronics, 1987, 17:11, 1361–1362

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