V. P. Duraev, P. G. Eliseev, B. I. Makhsudov, E. T. Nedelin, V. I. Shveĭkin, “Low-threshold InGaAsP/InP injection lasers”, Kvantovaya Elektronika, 1987, Volume 14, Number 11,Pages <nobr>2201

Lasers and physical processes in them

Low-threshold InGaAsP/InP injection lasers

V. P. Duraev, P. G. Eliseev, B. I. Makhsudov, E. T. Nedelin, V. I. Shveĭkin

Abstract: A determination was made of the characteristics of InGaAsP/InP injection lasers emitting at wavelengths in the region of 1.3μ. The minimum threshold current was 4 mA and cw operation was possible up to 120°C, which was the highest temperature achieved so far for lasers of this type and in this spectral range.

UDC: 621.378.826.038.854.4

PACS: 42.55.Px, 42.60.Jf, 42.60.Pk

Received: 03.06.1987